BC846S |
RFQ for BC846S |
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| Technical/Catalog Information | BC846S,115 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Transistor Type | 2 NPN (Dual) |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| Current - Collector (Ic) (Max) | 100mA |
| Power - Max | 300mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 100mA |
| Frequency - Transition | 100MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Surface Mount |
| Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
| Packaging | Tape & Reel (TR) |
| Drawing Number | 568; SOT363; GV, GW; 6 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BC846S,115 BC846S,115 |
| Product | Manufacturers | Pack | D/C |
| BC846S | - | SOT363 | - |
Features |
| • For AF input stages and driver applications• High current gain• Low collector-emitter saturation voltage• Two (galvanic) internal isolated Transistors in one package |
| Parameter | Symbol |
Values |
Unit |
| Collector-emitter voltage | VCEO |
65 |
V |
| Collector-base voltage | VCBO |
80 | |
| Collector-emitter voltage | VCES |
80 | |
| Emitter-base voltage | VEBO |
6 | |
| DC collector current | IC |
100 |
mA |
| Peak collector current | ICM |
200 | |
| Total power dissipation, TS =115 | Ptot |
250 |
mW |
| Junction temperature | Tj |
150 |
|
| Storage temperature | Tstg |
- 65 ... + 150 |